Researcher Database

SATRIA ZULKARNAEN BISRI

FacultyInstitute of Engineering Division of Applied Physics and Chemical Engineering
PositionAssociate Professor
Last Updated :2026/08/07

Activity information

Name and contact details

  • Name

    サトリア ズルカルナエン ビスリ, SATRIA ZULKARNAEN BISRI, SATRIA ZULKARNAEN BISRI
  • Tel

    042-388-7436
  • Fax

    042-388-7436
  • E-mail

    satria-bisrime.tuat.ac.jp
  • External link

    https://www.sustainable-quantum-nanomaterials-devices.com/

Affiliation / Position

  • Institute of Engineering Division of Applied Physics and Chemical Engineering, Associate Professor

Other affiliation

  • Graduate School of Engineering Department of Applied Physics and Chemical Engineering
  • Faculty of Engineering Department of Applied Physics and Chemical Engineering

Research History

  • RIKEN Center for Emergent Matter Science
    Visiting Scientist
    From 16 Oct. 2022
  • Institute of Engineering, Tokyo University of Agriculture and Technology
    Associate Professor
    From 01 Oct. 2022
  • RIKEN Center for Emergent Matter Science
    Senior Scientist
    From 01 Apr. 2022, To 30 Sep. 2022
  • Department of Materials Science and Engineering, Tokyo Institute of Technology
    Visiting Associate Professor
    From 15 Sep. 2018, To 30 Sep. 2022
  • RIKEN Center for Emergent Matter Science
    Research Scientist
    From 01 Nov. 2014, To 31 Mar. 2022
  • Zernike Institute for Advanced Materials, University of Groningen
    From 01 Nov. 2011, To 31 Oct. 2014
  • Faculty of Advanced Science and Engineering
    Department of Applied Physics
    Graduate Research Assistant
    From 01 Apr. 2010, To 08 Sep. 2011
  • Institute for Materials Research - Tohoku University
    Graduate Research Assistant
    From 01 Oct. 2006, To 31 Mar. 2010
  • University of Twente
    MESA+ Institute for Nanotechnology
    Visiting Researcher
    From 03 Apr. 2006, To 26 Jun. 2006

Education

  • Tohoku University
    Graduate School of Science
    Department of Physics
    To 08 Sep. 2011, graduated, doctor course
  • Tohoku University
    Graduate School of Science
    Department of Physics
    To 09 Sep. 2008, graduated, master course
  • Institut Teknologi Bandung
    Faculty of Mathematics and Natural Sciences
    Department of Physics
    To 04 Mar. 2006, graduated

Degree

  • Doctor of Science
    Tohoku University
    08 Sep. 2011

Research Areas

  • Nanotechnology/Materials, Applied condensed matter physics
  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering), Electric and electronic materials
  • Natural Science, Semiconductors, optical properties of condensed matter and atomic physics
  • Nanotechnology/Materials, Nanostructural physics
  • Nanotechnology/Materials, Nanometer-scale chemistry
  • Nanotechnology/Materials, Nanomaterials

Teaching Experience

  • Special Lecture on Advanced Applied Physics and Chemical Engineering II: "Physical and Energy Engineering"
    2024, 専門科目等
  • Electronic Device Engineering
    2024, 専門科目等
  • Electrical and Electronic Material Engineering
    2024, 専門科目等

Grants-in-Aid for Scientific Research

  • 基盤研究(C)
    High Performance Supercapacitors based on Hierarchical Colloidal Quantum Dot Assemblies
    From 2021, To 2023

Papers

  • Pursuing Band-like Transport in Colloidal Quantum Dot Assemblies
    Ricky Dwi Septianto, Dadan Suhendar, Mohammad Hamzah Fauzi, Satria Zulkarnaen Bisri
    The Journal of Physical Chemistry Letters
    American Chemical Society
    Charge-carrier transport in semiconductor colloidal quantum dot (CQD) solids has been the subject of extensive debate and investigation for more than a decade. Understanding the underlying transport mechanisms in CQD assemblies is critical for unlocking their full potential in optoelectronic applications. To date, a widely accepted view holds that carrier transport in conventional ligand-capped glassy CQD solids is a non-adiabatic hopping process, supported by both experimental observations and theoretical models. In contrast, recent advances have enabled the self-assembly of CQDs into long-range-ordered superlattices with epitaxial connections between neighboring QDs. These superlattices are expected by many to exhibit band-like transport, potentially overcoming the limitations of hopping conduction in disordered systems. However, definitive experimental evidence and a comprehensive theoretical framework for charge transport in such highly ordered structures remain lacking. While the formation mechanisms of these superlattices have been widely explored, this Perspective aims to provide insight into the current understanding of charge-carrier transport in epitaxially connected CQD superlattices.
    08 Apr. 2026, Research paper (scientific journal), 17, 16, DOI(公開)(r-map), 4686, 4701
  • High-Performance Photodetectors of Quasi-2-Dimensional Epitaxially-Connected Quantum Dot Superlattices
    Dadan Suhendar, Yuto Aoki, Chisa Nishiyama, Ricky Dwi Septianto, Satria Zulkarnaen Bisri
    Advanced Optical Materials
    Wiley
    Colloidal semiconductor quantum dots (QDs) are among the promising materials for optoelectronic device applications, including photodetectors. Their size-tunable bandgap enables wide-range wavelength photodetection from the visible to the mid-infrared regime. Most recently, the realization of epitaxially-connected quantum dot superlattices (QDSLs) addresses one of the critical challenges associated with assemblies of QDs and their electronic transport. These epitaxially-connected QDSLs demonstrated the possibility of delocalized charge transport, which could improve the electrical transport performance of QD-based devices. On the other hand, delocalized charge carriers might affect the quantum confinement effect, potentially reducing the merits of QDs for optoelectronic device performance. Here, we demonstrate high-performance photodetectors based on a monolayer of quasi-2D epitaxially connected PbS QDSLs, exhibiting higher responsivity and detectivity than those of conventional short-ligand-capped QD assemblies. The remarkable photodetection enhancement can be indicated from several aspects: (i) the light intensity-dependent characteristics reveal evidence of a low trap density within the epitaxially-connected superlattice, (ii) the time-resolved measurements show a faster response time and a two-step charge carrier dynamic, (iii) the wavelength-dependent analysis further suggests the occurrence of multiple exciton generation under high-energy photon excitation. These findings establish the epitaxially-connected QDSL as an optoelectronic metamaterial, an up-and-coming candidate for next-generation, high-performance photodetectors.
    20 Mar. 2026, Research paper (scientific journal), 14, 11, DOI(公開)(r-map), e03565
  • Bio-inspired carbon quantum dots derived from bilimbi (Averrhoa bilimbi L.) for sustainable nanofertilizer development
    Yayuk Astuti, Chilyatul Millati, Sri Widodo Agung Suedy, Satria Zulkarnaen Bisri
    Discover Applied Sciences
    Springer Nature
    03 Jan. 2026, Research paper (scientific journal), 8, DOI(公開)(r-map), 64
  • Evolution of the formation of AgBiS 2 colloidal nanocrystals for optoelectronic devices
    Fidya Azahro Nur Mawaddah, Dadan Suhendar, Yuta Tanaka, Keishi Kitada, Toshiki Shimizu, Hiroki Minoda, Satria Zulkarnaen Bisri
    Nanoscale
    Royal Society of Chemistry
    AgBiS2 has emerged as a promising environmentally friendly nanocrystal (NC) for optoelectronic applications due to its broad absorption spectrum in the visible and near-infrared regions. However, a performance ceiling has hindered the development of AgBiS2-based solar cells, with power conversion efficiencies (PCE) remaining stagnant at 9–10%. This limitation arises from a lack of understanding of its fundamental properties, such as its crystal structure and electronic properties, which are crucial for further optimisation. Here, we focus on a comprehensive investigation of the synthesis and formation of AgBiS2 NCs. Utilising Rietveld refinement, the crystallographic structure and phase purity are meticulously analysed, ensuring precise insights into the material's formation pathways. Furthermore, the constructed phase diagram of the Ag–Bi–S system reveals the threshold temperature at 160 °C to obtain pristine AgBiS2 NCs, while below that, Ag2S NCs are dominant. Density of states (DOS) analysis shows a similar bandgap with an experimental result of 0.8 eV, confirming the semiconductor properties. High-performance photodetectors of AgBiS2 NCs are demonstrated, exhibiting high responsivity, although only using a few monolayers of the nanocrystal assemblies. These results bridge the knowledge gap in AgBiS2 formation mechanisms and electronic behaviour, establishing a robust foundation to enhance its optoelectronic performance and integrate it into advanced device architectures.
    21 Aug. 2025, Research paper (scientific journal), joint, 17, 33, 2040-3364, DOI(公開)(r-map), 19231, 19242
  • Hot-Injection Synthesis of Monodisperse π-SnS Nanocrystals
    Thanyarat Phutthaphongloet, Ricky Dwi Septianto, Retno Miranti, Kiyohiro Adachi, Yuta Kubota, Daisuke Hashizume, Nobuhiro Matsushita, Yoshihiro Iwasa, Satria Zulkarnaen Bisri
    ACS Applied Nano Materials
    American Chemical Society
    Tin chalcogenide nanocrystals (NCs), particularly tin(II) sulfide (SnS), hold promise for environmentally benign optoelectronic applications. However, challenges such as scalable synthesis, susceptibility to oxidation, and unclear reaction mechanisms hinder further research and limit the exploration of their electronic properties. This study presents a single ligand-controlled hot-injection strategy to synthesize monodisperse pi-SnS NCs (4.7-8.5 nm) with unprecedented size uniformity and long-term stability (>1 year). By systematically optimizing precursor mole ratios (Sn/S up to 4:1) and adjusting solvent composition (reducing 1-octadecene (ODE) volume to <= 1.84 mL), we achieved narrow size distributions (standard deviation of 0.4-0.7 nm) and suppressed phase impurities, overcoming the limitations of conventional hot-injection methods that rely on multiple ligands. The synthesis advances demonstrated optoelectronic properties: size-dependent quantum confinement (band gap tuning via NC diameter) and p-type behavior in NC thin films treated with ligand 1,2-ethanedithiol (EDT). These findings provide a scalable, single-ligand synthesis framework for pi-SnS NCs, resolving challenges in reproducibility and stability while opening pathways for eco-friendly NC-based electronics.
    07 May 2025, Research paper (scientific journal), joint, 8, 19, DOI(公開)(r-map), 9702, 9710
  • Charge carrier injection and extraction of colloidal quantum dot assemblies: a perspective for optoelectronic devices
    Satria Zulkarnaen Bisri
    Journal of Information Display
    Taylor & Francis
    Efficient charge injection and transport are fundamental challenges in colloidal quantum dots (CQD) optoelectronic devices such as photodetectors, solar cells, and displays. Unlike traditional semiconductors, charge transport in QD films is governed by hopping mechanisms, influenced by interdot coupling, ligand chemistry, and defect states. However, many aspects of these processes remain poorly understood. The interplay between charge injection, interfacial trap states, and carrier mobility introduces complex loss pathways that hinder performance. Many key unanswered questions remain, including the influence of different QD compositions, ligand environments, and orders near the interface on charge transport. Here, we discuss the challenges that should be investigated and solved in the near future. Addressing these knowledge gaps through advanced spectroscopy, transport studies, and interfacial engineering will be crucial for unlocking the full potential of CQD for transport-based optoelectronic devices, including electroluminescence displays, paving the way for high-efficiency, low-power, and long-lifetime devices.
    03 Apr. 2025, Research paper (scientific journal), only, 26, 2, 1598-0316, DOI(公開)(r-map), 109, 130
  • Molecularly-anchored single PbS quantum dots as resonant tunnelling transistors
    Retno Dwi Wulandari, Dongbao Yin, Ricky Dwi Septianto, Seiichiro Izawa, Yoshihiro Iwasa, Satria Zulkarnaen Bisri, Yutaka Majima
    Nanoscale
    Royal Society of Chemistry
    The growing need for high-performance computing continues to drive improvement in circuit and device technologies, particularly with respect to speed and power efficiency. Device scaling remains the most effective strategy for meeting circuit performance requirements while reducing power consumption. Thanks to their solution processability, colloidal semiconductor quantum dots (QDs) are highly suitable for device miniaturisation as quantum information science platforms. Quantum mechanical effects must be carefully considered when designing nanometre-scale electronic devices (i.e., transistors) that incorporate a single QD. Here, we demonstrate a resonant tunnelling transistor (RTT) based on a single lead sulfide (PbS) QD anchored by a bidentate ligand molecule attached to heteroepitaxial spherical Au/Pt nanogap electrodes. Five negative differential resistances (NDRs) were observed at both positive and negative drain voltages in output characteristics, which could be attributed to the formation of a double-barrier “quantum well” structure with the strong Fermi level pinning of the discrete energy level of the QD to one electrode. Furthermore, these NDRs could be tuned by applying a gate electric field, which will become one of the keys for enabling quantum and neuromorphic electronics. This demonstration of single PbS-QD-based RTTs paves the way for sub-10 nm solution-processable quantum electronic devices.
    07 Mar. 2025, Research paper (scientific journal), joint, 17, 10, 2040-3364, DOI(公開)(r-map), 5672, 5680
  • Dendritic fibrous nano silica–titania for high-performance photocatalytic hydrogen evolution
    Riki Subagyo, Garcelina Rizky Anindika, Diana Inas Utami, Wahid Sidik Sarifuddin, Lei Zhang, Stella Jovita, Khawiyatur Riv’ah Agustina, Nurul Asikin Mijan, Yulfi Zetra, Hasliza Bahruji, Dadan Suhendar, Fidya Azahro Nur Mawaddah, Didik Prasetyoko, Satria Zulkarnaen Bisri, Arramel, Yuly Kusumawati
    ACS Applied Energy Materials
    American Chemical Society
    A crucial factor for the success of hydrogen (H2) as the backbone of energy transformation is the efficient production of green H2, especially through the solar-to-hydrogen process. The key to greatly improving photocatalytic H2 evolution lies in the design of catalyst materials, where nanostructure engineering plays a pivotal role in driving these advancements. Engineering the nanostructure of TiO2 as a photocatalyst can significantly drive up its H2 evolution performance by benefiting from the created large surface area and the suppressed charge recombination. Here we show the synthesis of dendritic fibrous nano silica–titania (DFNST) using in situ seed-microemulsion crystallization which demonstrate high performance H2 evolution even without the addition of any cocatalyst. The impact of different TiO2 crystalline phases on the formation of the DFNST composites and their H2 photogeneration performance under visible light is thoroughly investigated. Synthesizing the composites using a low-temperature reflux method enhances the textural properties of the TiO2. Significant influence of the inclusion of anatase, rutile, and mixed rutile–anatase TiO2 phases on the morphology, optical, and catalytic characteristics of the DFNST is revealed. The formation of Si–O–Ti bonds acting as electron transfer bridges between TiO2 and the SiO2 framework boosts the photocatalytic activity. On the other hand, the increased hydrophilicity in DFNSTa and DFNSTm enhanced water molecule uptake, contributing to efficient H2 ion generation and interaction with electrons to produce H2. Based on our current finding, the surface area plays a key role in enhancing the photocatalytic H2 evolution by providing the surface active sites, which supports other conditions, such as mesoporosity, band gap, and hydrophilicity, and is combined with defect control for facilitating effective charge carrier transfer and separation in the homojunction system, as observed in the mixed-phase DFNSTm that exhibit the highest H2 photogeneration rate.
    20 Jan. 2025, Research paper (scientific journal), joint, 8, 3, 2574-0962, DOI(公開)(r-map), 1598, 1608
  • Advancing Silver Bismuth Sulfide Quantum Dots for Practical Solar Cell Applications
    Fidya Azahro Nur Mawaddah, Satria Zulkarnaen Bisri
    Nanomaterials
    MDPI
    Colloidal quantum dots (CQDs) show unique properties that distinguish them from their bulk form, the so-called quantum confinement effects. This feature manifests in tunable size-dependent band gaps and discrete energy levels, resulting in distinct optical and electronic properties. The investigation direction of colloidal quantum dots (CQDs) materials has started switching from high-performing materials based on Pb and Cd, which raise concerns regarding their toxicity, to more environmentally friendly compounds, such as AgBiS2. After the first breakthrough in solar cell application in 2016, the development of AgBiS2 QDs has been relatively slow, and many of the fundamental physical and chemical properties of this material are still unknown. Investigating the growth of AgBiS2 QDs is essential to understanding the fundamental properties that can improve this material’s performance. This review comprehensively summarizes the synthesis strategies, ligand choice, and solar cell fabrication of AgBiS2 QDs. The development of PbS QDs is also highlighted as the foundation for improving the quality and performance of AgBiS2 QD. Furthermore, we prospectively discuss the future direction of AgBiS2 QD and its use for solar cell applications.
    Aug. 2024, Research paper (scientific journal), joint, 14, 16, DOI(公開)(r-map), 1328
  • High Volumetric Energy Density Supercapacitor of Additive-Free Quantum Dot Hierarchical Nanopore Structure
    Muhammad Alief Irham, Ricky Dwi Septianto, Retno Dwi Wulandari, Yutaka Majima, Ferry Iskandar, Yoshihiro Iwasa, Satria Zulkarnaen Bisri
    ACS Applied Materials & Interfaces
    American Chemical Society
    The high surface-area-to-volume ratio of colloidal quantum dots (QDs) positions them as promising materials for high-performance supercapacitor electrodes. However, the challenge lies in achieving a highly accessible surface area, while maintaining good electrical conductivity. An efficient supercapacitor demands a dense yet highly porous structure that facilitates efficient ion–surface interactions and supports fast charge mobility. Here we demonstrate the successful development of additive-free ultrahigh energy density electric double-layer capacitors based on quantum dot hierarchical nanopore (QDHN) structures. Lead sulfide QDs are assembled into QDHN structures that strike a balance between electrical conductivity and efficient ion diffusion by employing meticulous control over inter-QD distances without any additives. Using ionic liquid as the electrolyte, the high-voltage ultrathin-film microsupercapacitors achieve a remarkable combination of volumetric energy density (95.6 mWh/cm^3) and power density (13.5 W/cm^3). This achievement is attributed to the intrinsic capability of QDHN structures to accumulate charge carriers efficiently. These findings introduce innovative concepts for leveraging colloidal nanomaterials in the advancement of high-performance energy storage devices.
    03 May 2024, Research paper (scientific journal), joint, 16, 19, 1944-8244, DOI(公開)(r-map), 24889, 24898
  • Single PbS colloidal quantum dot transistors
    Kenji Shibata, Masaki Yoshida, Kazuhiko Hirakawa, Tomohiro Otsuka, Satria Zulkarnaen Bisri, Yoshihiro Iwasa
    Nature Communications
    Springer-Nature
    Colloidal quantum dots are sub-10 nm semiconductors treated with liquid processes, rendering them attractive candidates for single-electron transistors operating at high temperatures. However, there have been few reports on single-electron transistors using colloidal quantum dots due to the difficulty in fabrication. In this work, we fabricated single-electron transistors using single oleic acid-capped PbS quantum dot coupled to nanogap metal electrodes and measured single-electron tunneling. We observed dot size-dependent carrier transport, orbital-dependent electron charging energy and conductance, electric field modulation of the electron confinement potential, and the Kondo effect, which provide nanoscopic insights into carrier transport through single colloidal quantum dots. Moreover, the large charging energy in small quantum dots enables single-electron transistor operation even at room temperature. These findings, as well as the commercial availability and high stability, make PbS quantum dots promising for the development of quantum information and optoelectronic devices, particularly room-temperature single-electron transistors with excellent optical properties.
    18 Nov. 2023, Research paper (scientific journal), joint, 14, 1, DOI(公開)(r-map), 7486
  • Enabling metallic behaviour in two-dimensional superlattice of semiconductor colloidal quantum dots
    Ricky Dwi Septianto, Retno Miranti, Tomoka Kikitsu, Takaaki Hikima, Daisuke Hashizume, Nobuhiro Matsushita, Yoshihiro Iwasa, Satria Zulkarnaen Bisri
    Nature Communications
    Springer-Nature
    Semiconducting colloidal quantum dots and their assemblies exhibit superior optical properties owing to the quantum confinement effect. Thus, they are attracting tremendous interest from fundamental research to commercial applications. However, the electrical conducting properties remain detrimental predominantly due to the orientational disorder of quantum dots in the assembly. Here we report high conductivity and the consequent metallic behaviour of semiconducting colloidal quantum dots of lead sulphide. Precise facet orientation control to forming highly-ordered quasi-2-dimensional epitaxially-connected quantum dot superlattices is vital for high conductivity. The intrinsically high mobility over 10 cm^2 V^−1 s^−1 and temperature-independent behaviour proved the high potential of semiconductor quantum dots for electrical conducting properties. Furthermore, the continuously tunable subband filling will enable quantum dot superlattices to be a future platform for emerging physical properties investigations, such as strongly correlated and topological states, as demonstrated in the moiré superlattices of twisted bilayer graphene.
    26 May 2023, Research paper (scientific journal), joint, 14, 1, DOI(公開)(r-map), 2670
  • Enhancing quantum capacitance of iron sulfide supercapacitor through defect-engineering: A first-principles calculation
    Muhammad Alief Irham, Fahdzi Muttaqien, Satria Zulkarnaen Bisri, Ferry Iskandar
    Electrochimica Acta
    PERGAMON-ELSEVIER SCIENCE LTD
    Quantum capacitance (CQ) has recently emerged as a solution for the saturated growth of supercapacitor performances. The CQ depends on the density of states of the electrode materials, which could be tuned by several approaches (i.e., introducing dopants). In this case, a transition metal sulfide material with a narrow band gap, such as hexagonal iron sulfide (h-FeS), has enormous advantages. In this study, we predict p-type defect importance in the h-FeS structure on capacitance enhancement through the quantum capacitance mechanism. From the first-principle calculation, the Cr-doped h-FeS (FeS:Cr) anode results in integrated quantum capacitance (Cint Q ) of 1043 F/g, or 27 times more than pristine h-FeS. From the formation energy calculation, the Cr-doped structure has a lot of stable charged states enabling additional redox-related capacitance. As dopant concentration increased, the Cint Q is found to increase but then saturate due to delocalized state appearances. These findings imply that a first-principles understanding is essential to predict the enhanced capacitance properties on h-FeS and TMS supercapacitors.
    01 May 2023, Research paper (scientific journal), joint, 449, 0013-4686, DOI(公開)(r-map), 142235
  • Evolutions of the optical properties in green-emitting MAPbBr3 perovskite nanoplatelets/polymethyl methacrylate (PMMA) composite films for light-emitting diode applications
    Ea Cahya Septia Mahen, Fitri Aulia Permatasari, Octia Floweri, Bebeh Wahid Nuryadin, Muhammad Alief Irham, Satria Zulkarnaen Bisri, Akfiny Hasdi Aimon, Ferry Iskandar
    Journal of Luminescence
    ELSEVIER
    Organometal halide perovskites have been gaining tremendous attention for their potential application as optoelectronic devices, owing to their excellent optical and electronic properties. This work fabricated MAPbBr3/ PMMA composite film with bright green emission via a simple drop-casting method. It is found that when MAPbBr3 were combined with PMMA, PL peak position and edge absorption spectra exhibit a redshift phenomenon. Comprehensive characterizations using x-ray diffraction (XRD) and transmission electron microscope (TEM) suggested that this phenomenon possibly corresponded to the dielectric screening and strain of perovskite crystal induced by the presence of PMMA. Understanding this redshift phenomenon could be beneficial for developing high color purity optoelectronic devices. A potential application of the prepared film as a green down-converter is also demonstrated. Applying the MAPbBr3/PMMA film on a UV LED has successfully generated green color at (0.21, 0.71), close to the green color standards, i.e., NTSC 1953 and Adobe RGB 98. This result suggests that MAPbBr3 perovskite nanoplatelets/PMMA composite films have great potential for lightemitting device applications.
    01 Aug. 2022, Research paper (scientific journal), joint, 248, 0022-2313, DOI(公開)(r-map)
  • π-SnS colloidal nanocrystals with size-dependent band gaps
    Retno Miranti, Ricky Dwi Septianto, Tomoka Kikitsu, Daisuke Hashizume, Nobuhiro Matsushita, Yoshihiro Iwasa, Satria Zulkarnaen Bisri
    The Journal of Physical Chemistry C
    AMER CHEMICAL SOC
    Colloidal quantum dot (QD) solids are materials that exploit the quantum confinement properties of the constituent nanocrystals. Significant progress in QD optoelectronic devices has been made mainly using compounds with concerning high degree of toxicity for practical applications. Sn-chalcogenides are among the possible environmentally benign alternatives the bulks of which have demonstrated intriguing properties for energy devices. Nanostructuring these Sn-chalcogenides may create variations in their crystal structures and properties. Here, we demonstrate robust quantum confinement effects in small-diameter cubic SnS colloidal nanocrystals (NCs) and their potential exploitation for high-performance optoelectronic devices. Well-controlled production of cubic SnS colloidal NCs with a 4-10 nm diameter is established by developing a one-pot synthesis procedure in an inert condition that allows Sn complexation with only a single type of ligand molecule. The analyses of the X-ray diffractogram and transmission electron micrograph revealed that the structure of NCs is the so-called pi-type chiral and cubic structures. These NCs behave as quantum dots, exhibiting a quantum confinement effect with strong variations of energy band gaps by size. The photodetectors of the SnS NCs exhibit high responsivity comparable to the other established QD systems, although the channels are made only from a single or few layer(s). This new compound will open new pathways for establishing environmentally safe and high-performance QD optoelectronic and photocatalysis devices.
    24 Mar. 2022, Research paper (scientific journal), joint, 126, 11, 1932-7447, DOI(公開)(r-map), 5323, 5332
  • Solid-state nitrogen-doped carbon nanoparticles with tunable emission prepared by a microwave-assisted method
    Fitri Aulia Permatasari, Fitriyanti Nakul, Tirta Rona Mayangsari, Akfiny Hasdi Aimon, Bebeh Wahid Nuryadin, Satria Zulkarnaen Bisri, Takashi Ogi, Ferry Iskandar
    RSC advances
    Royal Society of Chemistry
    16 Dec. 2021, Research paper (scientific journal), 11, 63, DOI(公開)(r-map), 39917, 39923
  • Role of Intrinsic Points Defects on the Electronic Structure of Metal-Insulator Transition h-FeS
    Muhammad Alief Irham, Fahdzi Muttaqien, Satria Zulkarnaen Bisri, Ferry Iskandar
    The Journal of Physical Chemistry Letters
    American Chemical Society
    11 Nov. 2021, Research paper (scientific journal), 12, 44, DOI(公開)(r-map), 10777, 10782
  • Evidence of band filling in PbS colloidal quantum dot square superstructures
    Liming Liu, Ricky Dwi Septianto, Satria Zulkarnaen Bisri, Yasuhiro Ishida, Takuzo Aida, Yoshihiro Iwasa
    Nanoscale
    Royal Society of Chemistry
    07 Sep. 2021, Research paper (scientific journal), 13, 33, DOI(公開)(r-map), 14001, 14007
  • Carbon-based quantum dots for supercapacitors: Recent advances and future challenges
    Fitri Aulia Permatasari, Muhammad Alief Irham, Satria Zulkarnaen Bisri, Ferry Iskandar
    Nanomaterials
    MDPI
    03 Jan. 2021, Research paper (scientific journal), 11, 1, DOI(公開)(r-map), 91
  • Electron transport in iodide-capped core@ shell PbTe@ PbS colloidal nanocrystal solids
    Retno Miranti, Ricky Dwi Septianto, Maria Ibáñez, Maksym V Kovalenko, Nobuhiro Matsushita, Yoshihiro Iwasa, Satria Zulkarnaen Bisri
    Applied Physics Letters
    AIP Publishing LLC
    26 Oct. 2020, Research paper (scientific journal), 117, 17, DOI(公開)(r-map), 173101
  • On-demand tuning of charge accumulation and carrier mobility in quantum dot solids for electron transport and energy storage devices
    Ricky Dwi Septianto, Liming Liu, Ferry Iskandar, Nobuhiro Matsushita, Yoshihiro Iwasa, Satria Zulkarnaen Bisri
    NPG Asia Materials
    Nature Publishing Group UK
    08 May 2020, Research paper (scientific journal), 12, 1, DOI(公開)(r-map), 33
  • Exclusive electron transport in core@ shell PbTe@ PbS colloidal semiconductor Nanocrystal Assemblies
    Retno Miranti, Daiki Shin, Ricky Dwi Septianto, Maria Ibáñez, Maksym V Kovalenko, Nobuhiro Matsushita, Yoshihiro Iwasa, Satria Zulkarnaen Bisri
    ACS Nano
    American Chemical Society
    19 Feb. 2020, Research paper (scientific journal), 14, 3, DOI(公開)(r-map), 3242, 3250
  • Tunable electronic properties by ligand coverage control in PbS nanocrystal assemblies
    Liming Liu, Satria Zulkarnaen Bisri, Yasuhiro Ishida, Takuzo Aida, Yoshihiro Iwasa
    Nanoscale
    Royal Society of Chemistry
    07 Oct. 2019, Research paper (scientific journal), 11, 43, DOI(公開)(r-map), 20467, 20474
  • Photoinduced Rashba spin-to-charge conversion via an interfacial unoccupied state
    Jorge Puebla, Florent Auvray, Naoya Yamaguchi, Mingran Xu, Satria Zulkarnaen Bisri, Yoshihiro Iwasa, Fumiyuki Ishii, Yoshichika Otani
    Physical Review Letters
    American Physical Society
    24 Jun. 2019, Research paper (scientific journal), 122, 25, DOI(公開)(r-map), 256401
  • Ligand and solvent effects on hole transport in colloidal quantum dot assemblies for electronic devices
    Liming Liu, Satria Zulkarnaen Bisri, Yasuhiro Ishida, Daisuke Hashizume, Takuzo Aida, Yoshihiro Iwasa
    ACS Applied Nano Materials
    American Chemical Society
    02 Aug. 2018, Research paper (scientific journal), 1, 9, DOI(公開)(r-map), 5217, 5225
  • Semiconducting SWNTs sorted by polymer wrapping: How pure are they?
    Vladimir Derenskyi, Widianta Gomulya, Jia Gao, Satria Zulkarnaen Bisri, Mariacecilia Pasini, Yueh-Lin Loo, Maria Antonietta Loi
    Applied Physics Letters
    AIP Publishing LLC
    12 Feb. 2018, Research paper (scientific journal), 112, 7, DOI(公開)(r-map), 072106
  • Endeavor of iontronics: from fundamentals to applications of ion‐controlled electronics
    Satria Zulkarnaen Bisri, Sunao Shimizu, Masaki Nakano, Yoshihiro Iwasa
    Advanced Materials
    Wiley-VCH
    05 Jul. 2017, Research paper (scientific journal), 29, 25, DOI(公開)(r-map), 1607054
  • Strain‐Modulated Charge Transport in Flexible PbS Nanocrystal Field‐Effect Transistors
    Mohamad Insan Nugraha, Hiroyuki Matsui, Shun Watanabe, Takayoshi Kubo, Roger Häusermann, Satria Zulkarnaen Bisri, Mykhailo Sytnyk, Wolfgang Heiss, Maria Antonietta Loi, Jun Takeya
    Advanced Electronic Materials
    Wiley-VCH
    12 Jan. 2017, Research paper (scientific journal), 3, 1, DOI(公開)(r-map), 1600360
  • Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles
    Mohamad I Nugraha, Hiroyuki Matsui, Satria Z Bisri, Mykhailo Sytnyk, Wolfgang Heiss, Maria A Loi, Jun Takeya
    APL Materials
    AIP Publishing LLC
    01 Nov. 2016, Research paper (scientific journal), 4, 11, DOI(公開)(r-map), 116105
  • Double gate PbS quantum dot field‐effect transistors for tuneable electrical characteristics
    Artem G Shulga, Laura Piveteau, Satria Z Bisri, Maksym V Kovalenko, Maria A Loi
    Advanced electronic materials
    Wiley-VCH
    02 Feb. 2016, Research paper (scientific journal), 2, 4, DOI(公開)(r-map), 1500467
  • Anomalous Carrier Transport in Ambipolar Field‐Effect Transistor of Large Diameter Single‐Walled Carbon Nanotube Network
    Satria Zulkarnaen Bisri, Vladimir Derenskyi, Widianta Gomulya, Jorge Mario Salazar‐Rios, Martin Fritsch, Nils Fröhlich, Stefan Jung, Sybille Allard, Ullrich Scherf, Maria Antonietta Loi
    Advanced Electronic Materials
    Wiley-VCH
    01 Feb. 2016, Research paper (scientific journal), 2, 2, DOI(公開)(r-map), 1500222
  • Single‐Crystal‐Like Organic Thin‐Film Transistors Fabricated from Dinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene (DNTT) Precursor–Polystyrene Blends
    Azusa Hamaguchi, Tsuyoto Negishi, Yu Kimura, Yoshinori Ikeda, Kazuo Takimiya, Satria Zulkarnaen Bisri, Yoshihiro Iwasa, Takashi Shiro
    Advanced Materials
    Wiley-VCH
    01 Nov. 2015, Research paper (scientific journal), 27, 42, DOI(公開)(r-map), 6606, 6611
  • Selecting Semiconducting Single‐Walled Carbon Nanotubes with Narrow Bandgap Naphthalene Diimide‐Based Polymers
    Jorge Mario Salazar‐Rios, Widianta Gomulya, Vladimir Derenskyi, Jie Yang, Satria Zulkarnaen Bisri, Zhihua Chen, Antonio Facchetti, Maria Antonietta Loi
    Advanced Electronic Materials
    Wiley-VCH
    01 Aug. 2015, Research paper (scientific journal), 1, 8, DOI(公開)(r-map), 1500074
  • Absorbance Studies of Perovskite CH3NH3PbI (3-x) Clx as Light Harvester in Solar Cell
    Prawistin Noorlaily, Maria Ulfa, Satria Zulkarnaen Bisri, Ferry Iskandar
    Advanced Materials Research
    Trans Tech Publications Ltd
    01 Jul. 2015, Research paper (scientific journal), 1112, DOI(公開)(r-map), 282, 285
  • High gain hybrid graphene–organic semiconductor phototransistors
    Everardus H Huisman, Artem G Shulga, Paul J Zomer, Nikolaos Tombros, Davide Bartesaghi, Satria Zulkarnaen Bisri, Maria A Loi, L Jan Anton Koster, Bart J van Wees
    ACS applied materials & interfaces
    American Chemical Society
    03 Jun. 2015, Research paper (scientific journal), 7, 21, DOI(公開)(r-map), 11083, 11088
  • Effect of temperature on the selection of semiconducting single walled carbon nanotubes using Poly (3-dodecylthiophene-2, 5-diyl)
    Widianta Gomulya, Jorge Mario Salazar Rios, Vladimir Derenskyi, Satria Zulkarnaen Bisri, Stefan Jung, Martin Fritsch, Sybille Allard, Ullrich Scherf, Maria Cristina Dos Santos, Maria Antonietta Loi
    Carbon
    Pergamon
    01 Apr. 2015, Research paper (scientific journal), 84, 66, DOI(公開)(r-map), 73
  • High mobility and low density of trap states in dual‐solid‐gated PbS nanocrystal field‐effect transistors
    Mohamad Insan Nugraha, Roger Häusermann, Satria Zulkarnaen Bisri, Hiroyuki Matsui, Mykhailo Sytnyk, Wolfgang Heiss, Jun Takeya, Maria Antonietta Loi
    Advanced Materials
    Wiley-VCH
    01 Mar. 2015, Research paper (scientific journal), 27, 12, DOI(公開)(r-map), 2107, 2112
  • Carbon Nanotube Network Ambipolar Field‐Effect Transistors with 10^8 On/Off Ratio
    Vladimir Derenskyi, Widianta Gomulya, Jorge Mario Salazar Rios, Martin Fritsch, Nils Fröhlich, Stefan Jung, Sybille Allard, Satria Zulkarnaen Bisri, Pavlo Gordiichuk, Andreas Herrmann, Ullrich Scherf, Maria Antonietta Loi
    Advanced Materials
    Wiley-VCH
    01 Sep. 2014, Research paper (scientific journal), 26, 34, DOI(公開)(r-map), 5969, 5975
  • Conjugated polymer-assisted dispersion of single-wall carbon nanotubes: the power of polymer wrapping
    Suman Kalyan Samanta, Martin Fritsch, Ullrich Scherf, Widianta Gomulya, Satria Zulkarnaen Bisri, Maria Antonietta Loi
    Accounts of chemical research
    American Chemical Society
    19 Aug. 2014, Research paper (scientific journal), 47, 8, DOI(公開)(r-map), 2446, 2456
  • Determination of the electronic energy levels of colloidal nanocrystals using field‐effect transistors and ab‐initio calculations
    Satria Zulkarnaen Bisri, Elena Degoli, Nicola Spallanzani, Gopi Krishnan, Bart Jan Kooi, Corneliu Ghica, Maksym Yarema, Wolfgang Heiss, Olivia Pulci, Stefano Ossicini, Maria Antonietta Loi
    Advanced Materials
    Wiley VCH
    01 Aug. 2014, Research paper (scientific journal), 26, 32, DOI(公開)(r-map), 5639, 5645
  • Reducing charge trapping in PbS colloidal quantum dot solids
    DM Balazs, MI Nugraha, SZ Bisri, M Sytnyk, W Heiss, MA Loi
    Applied Physics Letters
    American Institute of Physics
    17 Mar. 2014, Research paper (scientific journal), 104, 11, DOI(公開)(r-map), 112104
  • The pursuit of electrically-driven organic semiconductor lasers
    Satria Zulkarnaen Bisri, Taishi Takenobu, Yoshihiro Iwasa
    Journal of Materials Chemistry C
    Royal Society of Chemistry
    07 Feb. 2014, Research paper (scientific journal), 2, 16, DOI(公開)(r-map), 2827, 2836
  • Outlook and emerging semiconducting materials for ambipolar transistors
    Satria Zulkarnaen Bisri, Claudia Piliego, Jia Gao, Maria Antonietta Loi
    Advanced materials
    Wiley VCH
    01 Feb. 2014, Research paper (scientific journal), 26, 8, DOI(公開)(r-map), 1176, 1199
  • Organic single-crystal light-emitting field-effect transistors
    Shu Hotta, Takeshi Yamao, Satria Zulkarnaen Bisri, Taishi Takenobu, Yoshihiro Iwasa
    Journal of Materials Chemistry C
    Royal Society of Chemistry
    19 Nov. 2013, Research paper (scientific journal), 2, 6, DOI(公開)(r-map), 965, 980
  • Multi-color light-emitting transistors composed of organic single crystals
    Yohei Yomogida, Hayato Sakai, Kosuke Sawabe, Shota Gocho, Satria Zulkarnaen Bisri, Hajime Nakanotani, Chihaya Adachi, Taku Hasobe, Yoshihiro Iwasa, Taishi Takenobu
    Organic Electronics
    Elsevier
    01 Nov. 2013, Research paper (scientific journal), 14, 11, DOI(公開)(r-map), 2737, 2742
  • Low Driving Voltage and High Mobility Ambipolar Field‐Effect Transistors with PbS Colloidal Nanocrystals
    Satria Zulkarnaen Bisri, Claudia Piliego, Maksym Yarema, Wolfgang Heiss, Maria Antonietta Loi
    Advanced Materials
    WILEY‐VCH Verlag
    21 Aug. 2013, Research paper (scientific journal), 25, 31, DOI(公開)(r-map), 4309, 4314
  • 5.2% efficient PbS nanocrystal Schottky solar cells
    Claudia Piliego, Loredana Protesescu, Satria Zulkarnaen Bisri, Maksym V Kovalenko, Maria Antonietta Loi
    Energy & Environmental Science
    Royal Society of Chemistry
    06 Aug. 2013, Research paper (scientific journal), 6, 10, DOI(公開)(r-map), 3054, 3059
  • Semiconducting single‐walled carbon nanotubes on demand by polymer wrapping
    Widianta Gomulya, Guadalupe Diaz Costanzo, Elton J Figueiredo De Carvalho, Satria Zulkarnaen Bisri, Vladimir Derenskyi, Martin Fritsch, Nils Fröhlich, Sybille Allard, Pavlo Gordiichuk, Andreas Herrmann, Siewert Jan Marrink, Maria Cristina Dos Santos, Ulrich Scherf, Maria Antonietta Loi
    Advanced Materials
    WILEY‐VCH Verlag
    04 Jun. 2013, Research paper (scientific journal), 25, 21, DOI(公開)(r-map), 2948, 2956
  • Organic single-crystal light-emitting transistor coupling with optical feedback resonators
    Satria Zulkarnaen Bisri, Kosuke Sawabe, Masaki Imakawa, Kenichi Maruyama, Takeshi Yamao, Shu Hotta, Yoshihiro Iwasa, Taishi Takenobu
    Scientific Reports
    Nature Publishing Group UK
    17 Dec. 2012, Research paper (scientific journal), 2, 1, DOI(公開)(r-map), 985
  • High Performance Ambipolar Field‐Effect Transistor of Random Network Carbon Nanotubes
    Satria Zulkarnaen Bisri, Jia Gao, Vladimir Derenskyi, Widianta Gomulya, Igor Iezhokin, Pavlo Gordiichuk, Andreas Herrmann, Maria Antonietta Loi
    Advanced Materials
    WILEY‐VCH Verlag
    04 Dec. 2012, Research paper (scientific journal), 24, 46, DOI(公開)(r-map), 6147, 6152
  • Electrical investigation of the interface band structure in rubrene single-crystal/nickel junction
    Yuta Kitamura, Eiji Shikoh, Satria Zulkarnaen Bisri, Taishi Takenobu, Masashi Shiraishi
    Applied Physics Letters
    American Institute of Physics
    25 Jul. 2011, Research paper (scientific journal), 99, 4, DOI(公開)(r-map), 043505
  • p‐i‐n Homojunction in Organic Light‐Emitting Transistors
    Satria Zulkarnaen Bisri, Taishi Takenobu, Kosuke Sawabe, Satoshi Tsuda, Yohei Yomogida, Takeshi Yamao, Shu Hotta, Chihaya Adachi, Yoshihiro Iwasa
    Advanced Materials
    WILEY‐VCH Verlag
    24 Jun. 2011, Research paper (scientific journal), 23, 24, DOI(公開)(r-map), 2753, 2758
  • Green light emission from the edges of organic single-crystal transistors
    Yohei Yomogida, Taishi Takenobu, Hidekazu Shimotani, Kosuke Sawabe, Satria Zulkarnaen Bisri, Takeshi Yamao, Shu Hotta, Yoshihiro Iwasa
    Applied Physics Letters
    American Institute of Physics
    25 Oct. 2010, Research paper (scientific journal), 97, DOI(公開)(r-map), 173301
  • High current densities in a highly photoluminescent organic single-crystal light-emitting transistor
    Kosuke Sawabe, Taishi Takenobu, Satria Zulkarnaen Bisri, Takeshi Yamao, Shu Hotta, Yoshihiro Iwasa
    Applied Physics Letters
    American Institute of Physics
    26 Jul. 2010, Research paper (scientific journal), 97, DOI(公開)(r-map), 043307
  • Electron transport in rubrene single-crystal transistors
    Satria Zulkarnaen Bisri, Taishi Takenobu, Tetsuo Takahashi, Yoshihiro Iwasa
    Applied Physics Letters
    American Institute of Physics
    03 May 2010, Research paper (scientific journal), 96, DOI(公開)(r-map), 183304
  • High Mobility and Luminescent Efficiency in Organic Single‐Crystal Light‐Emitting Transistors
    Satria Zulkarnaen Bisri, Taishi Takenobu, Yohei Yomogida, Hidekazu Shimotani, Takeshi Yamao, Shu Hotta, Yoshihiro Iwasa
    Advanced Functional Materials
    WILEY‐VCH Verlag
    09 Jun. 2009, Research paper (scientific journal), 19, 11, DOI(公開)(r-map), 1728, 1735
  • High current density in light-emitting transistors of organic single crystals
    Taishi Takenobu, Satria Zulkarnaen Bisri, Tetsuo Takahashi, Masayuki Yahiro, Chihaya Adachi, Yoshihiro Iwasa
    Physical review letters
    American Physical Society
    13 Feb. 2008, Research paper (scientific journal), 100, 6, DOI(公開)(r-map), 066601
  • Preparation of metal–SAM–dendrimer–SAM–metal junctions by supramolecular metal transfer printing
    Christian A Nijhuis, Jurjen ter Maat, Satria Z Bisri, Marcel HH Weusthof, Cora Salm, Jurriaan Schmitz, Bart Jan Ravoo, Jurriaan Huskens, David N Reinhoudt
    New journal of chemistry
    Royal Society of Chemistry
    08 Jan. 2008, Research paper (scientific journal), 32, 4, DOI(公開)(r-map), 652, 661
  • Ambipolar field-effect transistor of high photoluminescent material tetraphenylpyrene (TPPy) single crystal
    Satria Zulkarnaen Bisri, Tetsuo Takahashi, Taishi Takenobu, Masayuki Yahiro, Chihaya Adachi, Yoshihiro Iwasa
    Japanese journal of applied physics
    IOP Publishing
    15 Jun. 2007, Research paper (scientific journal), 46, 6L, DOI(公開)(r-map), L596

Media Coverage

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    EE Times Japan
    From 07 Aug. 2025, To 07 Aug. 2025
  • 半導体コロイド量子ドット1個を用いた単一電子トランジスタの室温動作に成功
    農工大らの研究チームは「半導体コロイド量子ドット」1つを用いた「単一電子トランジスタ」(SET)を作製し、従来困難だった量子ドット1個の電気伝導の詳細な評価を行うとともに、SETの室温動作も実現したことを共同発表したと、紹介される。
    TECH+
    From 05 Dec. 2023, To 05 Dec. 2023
  • 半導体コロイド量子ドット2個を用いた単一電子トランジスタの室温動作に成功
    農工大らの研究チームは「半導体コロイド量子ドット」1つを用いた「単一電子トランジスタ」(SET)を作製し、従来困難だった量子ドット2個の電気伝導の詳細な評価を行うとともに、SETの室温動作も実現したことを共同発表したと、紹介される。
    マイナビニュース
    From 05 Dec. 2023, To 05 Dec. 2023
  • 東北工業大・東大・東北大・理研・東京農工大、単一コロイド量子ドットで電気伝導の評価と制御に成功
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    日経新聞
    From 01 Dec. 2023, To 01 Dec. 2023
  • Lined-up quantum dots become highly conductive
    Assemblies of quantum dots tend to be highly disordered, but when the facets of these tiny semiconducting structures are lined up like soldiers on parade, something strange happens: the dots become very good at conducting electricity.
    physics world
    From 26 Jun. 2023, To 26 Jun. 2023
  • Metallic Behaviour Of Semiconducting Colloidal Quantum Dots (RIKEN, Others)
    A technical paper titled “Enabling metallic behaviour in two-dimensional superlattice of semiconductor colloidal quantum dots” was published by researchers at RIKEN Center for Emergent Matter Science (CEMS), Tokyo Institute of Technology, RIKEN SPring-8 Center, The University of Tokyo, and Tokyo University of Agriculture and Technology.
    SEMICONDUCTOR ENGINEERING
    From 14 Jun. 2023, To 14 Jun. 2023
  • 移動度は従来の1000~100万倍高移動度の半導体コロイド量子ドット超格子を実現
    理化学研究所創発物性科学研究センター創発デバイス研究チームの岩佐義宏チームリーダーとサトリア・ビスリ上級研究員(現在は客員研究員、東京農工大学大学院工学研究院准教授)らによる共同研究グループは2023年5月、エピタキシャル接合により作製した「半導体コロイド量子ドットの超格子薄膜」が、従来の1000~100万倍という高い移動度になることを確認したと紹介される。
    EETimes Japan
    From 01 Jun. 2023, To 01 Jun. 2023
  • Creating a "Superlattice" of Semiconductor Quantum Dots With Metallic Behavior
    理化学研究所創発物性科学研究センターの研究者と東京農工大学の共同研究者らは、金属のように動作できる半導体量子ドットの「超格子」を作成することに成功し、この人気のある種類の材料に刺激的な新しい特性を与える可能性があると掲載される。
    An AZoNetwork Site
    From 29 May 2023, To 29 May 2023
  • Forging a dream material with semiconductor quantum dots
    Phys.Org
    From 26 May 2023, To 26 May 2023
  • New Findings by Researchers a Step Towards All-QD Displays
    Display Daily
    From 26 May 2023, To 26 May 2023
  • Forging a dream material with semiconductor quantum dots
    EurekAlert
    From 26 May 2023, To 26 May 2023
  • Metallic Magic: Forging a Dream Material With Semiconductor Quantum Dots
    Scitech Daily
    From 26 May 2023, To 26 May 2023

Professional Memberships

  • The Electrochemical Society of Japan
    From 08 Dec. 2022
  • The Japan Society of Applied Physics
    From 20 Jul. 2016
  • American Chemical Society


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